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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTC80H29T1G APTC80H29T1G Microsemi Power Products Group MOSFET 4N-CH 800V 15A SP1
APTC80SK15T1G APTC80SK15T1G Microsemi Power Products Group MOSFET N-CH 800V 28A SP1
APTM08TDUM04PG APTM08TDUM04PG Microsemi Power Products Group MOSFET 6N-CH 75V 120A SP6-P
APTM100A12STG APTM100A12STG Microsemi Power Products Group MOSFET 2N-CH 1000V 68A LP8W
APTM100A23SCTG APTM100A23SCTG Microsemi Power Products Group MOSFET 2N-CH 1000V 36A SP4
APTM100A46FT1G APTM100A46FT1G Microsemi Power Products Group MOSFET 2N-CH 1000V 19A SP1
APTM100DA18T1G APTM100DA18T1G Microsemi Power Products Group MOSFET N-CH 1000V 40A SP1
APTM100DA40T1G APTM100DA40T1G Microsemi Power Products Group MOSFET N-CH 1000V 20A SP1
APTM100DU18TG APTM100DU18TG Microsemi Power Products Group MOSFET 2N-CH 1000V 43A SP4
APTM100H80FT1G APTM100H80FT1G Microsemi Power Products Group MOSFET 4N-CH 1000V 11A SP1
APTM100SK40T1G APTM100SK40T1G Microsemi Power Products Group MOSFET N-CH 1000V 20A SP1
APTM100TDU35PG APTM100TDU35PG Microsemi Power Products Group MOSFET 6N-CH 1000V 22A SP6-P
APTM100U13SG APTM100U13SG Microsemi Power Products Group MOSFET N-CH 1000V 65A J3
APTM10DHM09TG APTM10DHM09TG Microsemi Power Products Group MOSFET 2N-CH 100V 139A SP4
APTM10DUM05TG APTM10DUM05TG Microsemi Power Products Group MOSFET 2N-CH 100V 278A SP4
APTM10HM09FTG APTM10HM09FTG Microsemi Power Products Group MOSFET 4N-CH 100V 139A SP4
APTM10TDUM19PG APTM10TDUM19PG Microsemi Power Products Group MOSFET 6N-CH 100V 70A SP6-P
APTM120A80FT1G APTM120A80FT1G Microsemi Power Products Group MOSFET 2N-CH 1200V 14A SP1
APTM120DA15G APTM120DA15G Microsemi Power Products Group MOSFET N-CH 1200V 60A SP6
APTM120DA29TG APTM120DA29TG Microsemi Power Products Group MOSFET N-CH 1200V 34A SP4
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