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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTM120DA68T1G APTM120DA68T1G Microsemi Power Products Group MOSFET N-CH 1200V 15A SP1
APTM120DU29TG APTM120DU29TG Microsemi Power Products Group MOSFET 2N-CH 1200V 34A SP4
APTM120H57FT3G APTM120H57FT3G Microsemi Power Products Group MOSFET 4N-CH 1200V 17A SP3
APTM120H57FTG APTM120H57FTG Microsemi Power Products Group MOSFET 4N-CH 1200V 17A SP4
APTM120SK15G APTM120SK15G Microsemi Power Products Group MOSFET N-CH 1200V 60A SP6
APTM120SK29TG APTM120SK29TG Microsemi Power Products Group MOSFET N-CH 1200V 34A SP4
APTM120SK68T1G APTM120SK68T1G Microsemi Power Products Group MOSFET N-CH 1200V 15A SP1
APTM120TA57FPG APTM120TA57FPG Microsemi Power Products Group MOSFET 6N-CH 1200V 17A SP6-P
APTM120U10DAG APTM120U10DAG Microsemi Power Products Group MOSFET N-CH 1200V 116A SP6
APTM120UM95FAG APTM120UM95FAG Microsemi Power Products Group MOSFET N-CH 1200V 103A SP6
APTM20AM05FTG APTM20AM05FTG Microsemi Power Products Group MOSFET 2N-CH 200V 333A SP4
APTM20DAM10TG APTM20DAM10TG Microsemi Power Products Group MOSFET N-CH 200V 175A SP4
APTM20DHM10G APTM20DHM10G Microsemi Power Products Group MOSFET 2N-CH 200V 175A SP6
APTM20DHM16TG APTM20DHM16TG Microsemi Power Products Group MOSFET 2N-CH 200V 104A SP4
APTM20DHM20TG APTM20DHM20TG Microsemi Power Products Group MOSFET 2N-CH 200V 89A SP4
APTM20DUM05TG APTM20DUM05TG Microsemi Power Products Group MOSFET 2N-CH 200V 333A SP8
APTM20DUM10TG APTM20DUM10TG Microsemi Power Products Group MOSFET 2N-CH 200V 175A SP4
APTM20SKM10TG APTM20SKM10TG Microsemi Power Products Group MOSFET N-CH 200V 175A SP4
APTM20TDUM16PG APTM20TDUM16PG Microsemi Power Products Group MOSFET 6N-CH 200V 104A SP6-P
APTM20UM05SG APTM20UM05SG Microsemi Power Products Group MOSFET N-CH 200V 317A J3
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