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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTMC60TLM14CAG APTMC60TLM14CAG Microsemi Power Products Group MOSFET N-CH 600V SP6C
APTMC120TAM12CTPAG APTMC120TAM12CTPAG Microsemi Power Products Group MOSFET N-CH 1200V SP6P
APT14050JVFR APT14050JVFR Microsemi Power Products Group MOSFET N-CH 1400V 23A SOT-227
APT20M19JVR APT20M19JVR Microsemi Power Products Group MOSFET N-CH 200V 112A SOT-227
APT31N80JC3 APT31N80JC3 Microsemi Power Products Group MOSFET N-CH 800V 31A SOT-227
APT5510JFLL APT5510JFLL Microsemi Power Products Group MOSFET N-CH 550V 44A SOT-227
APT55M50JFLL APT55M50JFLL Microsemi Power Products Group MOSFET N-CH 550V 77A SOT-227
APT55M65JFLL APT55M65JFLL Microsemi Power Products Group MOSFET N-CH 550V 63A SOT-227
APT8014JLL APT8014JLL Microsemi Power Products Group MOSFET N-CH 800V 42A SOT-227
APT8024JLL APT8024JLL Microsemi Power Products Group MOSFET N-CH 800V 29A SOT-227
APT50N60JCU2 APT50N60JCU2 Microsemi Power Products Group MOSFET N-CH 600V 52A SOT-227
APTC60AM70T1G APTC60AM70T1G Microsemi Power Products Group MOSFET 2N-CH 600V 39A SP1
APTC60DAM35T1G APTC60DAM35T1G Microsemi Power Products Group MOSFET N-CH 600V 72A SP1
APTC60DDAM70T3G APTC60DDAM70T3G Microsemi Power Products Group MOSFET 2N-CH 600V 39A SP3
APTC60DSKM70T3G APTC60DSKM70T3G Microsemi Power Products Group MOSFET 2N-CH 600V 39A SP3
APTC60SKM35T1G APTC60SKM35T1G Microsemi Power Products Group MOSFET N-CH 600V 72A SP1
APTC80A15T1G APTC80A15T1G Microsemi Power Products Group MOSFET 2N-CH 800V 28A SP1
APTC80DA15T1G APTC80DA15T1G Microsemi Power Products Group MOSFET N-CH 800V 28A SP1
APTC80DDA29T3G APTC80DDA29T3G Microsemi Power Products Group MOSFET 2N-CH 800V 15A SP3
APTC80DSK29T3G APTC80DSK29T3G Microsemi Power Products Group MOSFET 2N-CH 800V 15A SP3
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