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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
LP1030DK1-G LP1030DK1-G Microchip Technology MOSFET 2P-CH 300V SOT23-5
TC6320TG-G TC6320TG-G Microchip Technology MOSFET N/P-CH 200V 8SOIC
TC6320TG-G TC6320TG-G Microchip Technology MOSFET N/P-CH 200V 8SOIC
TC6320TG-G TC6320TG-G Microchip Technology MOSFET N/P-CH 200V 8SOIC
DN2625DK6-G DN2625DK6-G Microchip Technology MOSFET 2N-CH 250V 1.1A 8VDFN
2N7335 2N7335 Microsemi Commercial Components Group MOSFET 4P-CH 100V 0.75A MO-036AB
2N7334 2N7334 Microsemi Commercial Components Group MOSFET 4N-CH 100V 1A MO-036AB
LN60A01ES-LF-Z LN60A01ES-LF-Z Monolithic Power Systems Inc MOSFET 3N-CH 600V 0.08A 8SOIC
LN60A01EP-LF LN60A01EP-LF Monolithic Power Systems Inc MOSFET 3N-CH 600V 0.08A 8DIP
LN60A01ES-LF LN60A01ES-LF Monolithic Power Systems Inc MOSFET 3N-CH 600V 0.08A 8SOIC
2N7002PS,115 2N7002PS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.32A 6TSSOP
2N7002PS,115 2N7002PS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.32A 6TSSOP
2N7002PS,115 2N7002PS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.32A 6TSSOP
PMGD280UN,115 PMGD280UN,115 NXP Semiconductors MOSFET 2N-CH 20V 0.87A 6TSSOP
PMGD280UN,115 PMGD280UN,115 NXP Semiconductors MOSFET 2N-CH 20V 0.87A 6TSSOP
PMGD280UN,115 PMGD280UN,115 NXP Semiconductors MOSFET 2N-CH 20V 0.87A 6TSSOP
PMDXB600UNE PMDXB600UNE NXP Semiconductors MOSFET 2N-CH 20V 0.6A 6DFN
PMDXB600UNE PMDXB600UNE NXP Semiconductors MOSFET 2N-CH 20V 0.6A 6DFN
PMDXB600UNE PMDXB600UNE NXP Semiconductors MOSFET 2N-CH 20V 0.6A 6DFN
BSS138BKS,115 BSS138BKS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.32A 6TSSOP
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