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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSS84AKV,115 BSS84AKV,115 NXP Semiconductors MOSFET 2P-CH 50V 0.17A SOT666
BSS84AKV,115 BSS84AKV,115 NXP Semiconductors MOSFET 2P-CH 50V 0.17A SOT666
BSS84AKV,115 BSS84AKV,115 NXP Semiconductors MOSFET 2P-CH 50V 0.17A SOT666
BSS84AKS,115 BSS84AKS,115 NXP Semiconductors MOSFET 2P-CH 50V 0.16A 6TSSOP
BSS84AKS,115 BSS84AKS,115 NXP Semiconductors MOSFET 2P-CH 50V 0.16A 6TSSOP
BSS84AKS,115 BSS84AKS,115 NXP Semiconductors MOSFET 2P-CH 50V 0.16A 6TSSOP
PMGD290XN,115 PMGD290XN,115 NXP Semiconductors MOSFET 2N-CH 20V 0.86A 6TSSOP
PMGD290XN,115 PMGD290XN,115 NXP Semiconductors MOSFET 2N-CH 20V 0.86A 6TSSOP
PMGD290XN,115 PMGD290XN,115 NXP Semiconductors MOSFET 2N-CH 20V 0.86A 6TSSOP
PMGD780SN,115 PMGD780SN,115 NXP Semiconductors MOSFET 2N-CH 60V 0.49A 6TSSOP
PMDPB30XN,115 PMDPB30XN,115 NXP Semiconductors MOSFET 2N-CH 20V 4A 6HUSON
PMDPB30XN,115 PMDPB30XN,115 NXP Semiconductors MOSFET 2N-CH 20V 4A 6HUSON
PMDPB30XN,115 PMDPB30XN,115 NXP Semiconductors MOSFET 2N-CH 20V 4A 6HUSON
BUK9K52-60E,115 BUK9K52-60E,115 NXP Semiconductors MOSFET 2N-CH 60V 16A LFPAK56D
BUK9K52-60E,115 BUK9K52-60E,115 NXP Semiconductors MOSFET 2N-CH 60V 16A LFPAK56D
BUK9K52-60E,115 BUK9K52-60E,115 NXP Semiconductors MOSFET 2N-CH 60V 16A LFPAK56D
PMGD780SN,115 PMGD780SN,115 NXP Semiconductors MOSFET 2N-CH 60V 0.49A 6TSSOP
PMGD780SN,115 PMGD780SN,115 NXP Semiconductors MOSFET 2N-CH 60V 0.49A 6TSSOP
PMGD370XN,115 PMGD370XN,115 NXP Semiconductors MOSFET 2N-CH 30V 0.74A 6TSSOP
PMGD370XN,115 PMGD370XN,115 NXP Semiconductors MOSFET 2N-CH 30V 0.74A 6TSSOP
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