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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PMGD370XN,115 PMGD370XN,115 NXP Semiconductors MOSFET 2N-CH 30V 0.74A 6TSSOP
BUK9K18-40E,115 BUK9K18-40E,115 NXP Semiconductors MOSFET 2N-CH 40V 30A LFPAK56D
BUK9K18-40E,115 BUK9K18-40E,115 NXP Semiconductors MOSFET 2N-CH 40V 30A LFPAK56D
BUK9K18-40E,115 BUK9K18-40E,115 NXP Semiconductors MOSFET 2N-CH 40V 30A LFPAK56D
PMCXB900UE PMCXB900UE NXP Semiconductors MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
PMCXB900UE PMCXB900UE NXP Semiconductors MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
PMCXB900UE PMCXB900UE NXP Semiconductors MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
BUK9K32-100EX BUK9K32-100EX NXP Semiconductors MOSFET 2N-CH 100V 26A 56LFPAK
BUK9K32-100EX BUK9K32-100EX NXP Semiconductors MOSFET 2N-CH 100V 26A 56LFPAK
BUK9K32-100EX BUK9K32-100EX NXP Semiconductors MOSFET 2N-CH 100V 26A 56LFPAK
PMCPB5530X,115 PMCPB5530X,115 NXP Semiconductors MOSFET N/P-CH 20V 6HUSON
PMCPB5530X,115 PMCPB5530X,115 NXP Semiconductors MOSFET N/P-CH 20V 6HUSON
PMCPB5530X,115 PMCPB5530X,115 NXP Semiconductors MOSFET N/P-CH 20V 6HUSON
BUK7K6R8-40E,115 BUK7K6R8-40E,115 NXP Semiconductors MOSFET 2N-CH 40V 40A LFPAK56D
BUK7K6R8-40E,115 BUK7K6R8-40E,115 NXP Semiconductors MOSFET 2N-CH 40V 40A LFPAK56D
BUK7K6R8-40E,115 BUK7K6R8-40E,115 NXP Semiconductors MOSFET 2N-CH 40V 40A LFPAK56D
BUK9K45-100E,115 BUK9K45-100E,115 NXP Semiconductors MOSFET 2N-CH 100V 21A LFPAK56D
BUK9K45-100E,115 BUK9K45-100E,115 NXP Semiconductors MOSFET 2N-CH 100V 21A LFPAK56D
BUK9K45-100E,115 BUK9K45-100E,115 NXP Semiconductors MOSFET 2N-CH 100V 21A LFPAK56D
BUK7K6R2-40EX BUK7K6R2-40EX NXP Semiconductors MOSFET 2N-CH 40V 40A 56LFPAK
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