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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PHN210T,118 PHN210T,118 NXP Semiconductors MOSFET 2N-CH 30V 8SOIC
PMDPB70XP,115 PMDPB70XP,115 NXP Semiconductors MOSFET 2P-CH 30V 2.9A 6DFN
PMDPB70XP,115 PMDPB70XP,115 NXP Semiconductors MOSFET 2P-CH 30V 2.9A 6DFN
PMDPB70XP,115 PMDPB70XP,115 NXP Semiconductors MOSFET 2P-CH 30V 2.9A 6DFN
PMDPB85UPE,115 PMDPB85UPE,115 NXP Semiconductors MOSFET 2P-CH 20V 2.9A 6HUSON
PMDPB85UPE,115 PMDPB85UPE,115 NXP Semiconductors MOSFET 2P-CH 20V 2.9A 6HUSON
PMDPB85UPE,115 PMDPB85UPE,115 NXP Semiconductors MOSFET 2P-CH 20V 2.9A 6HUSON
PMDPB80XP,115 PMDPB80XP,115 NXP Semiconductors MOSFET 2P-CH 20V 2.7A HUSON6
PMDPB80XP,115 PMDPB80XP,115 NXP Semiconductors MOSFET 2P-CH 20V 2.7A HUSON6
PMDPB80XP,115 PMDPB80XP,115 NXP Semiconductors MOSFET 2P-CH 20V 2.7A HUSON6
PMDPB55XP,115 PMDPB55XP,115 NXP Semiconductors MOSFET 2P-CH 20V 3.4A 6HUSON
PMDPB55XP,115 PMDPB55XP,115 NXP Semiconductors MOSFET 2P-CH 20V 3.4A 6HUSON
PMDPB55XP,115 PMDPB55XP,115 NXP Semiconductors MOSFET 2P-CH 20V 3.4A 6HUSON
PHKD13N03LT,518 PHKD13N03LT,518 NXP Semiconductors MOSFET 2N-CH 30V 10.4A 8SOIC
PHKD6N02LT,518 PHKD6N02LT,518 NXP Semiconductors MOSFET 2N-CH 20V 10.9A SOT96-1
PHN203,518 PHN203,518 NXP Semiconductors MOSFET 2N-CH 30V 6.3A SOT96-1
PHKD3NQ10T,518 PHKD3NQ10T,518 NXP Semiconductors MOSFET 2N-CH 100V 3A 8SOIC
BUK7K8R7-40EX BUK7K8R7-40EX NXP Semiconductors MOSFET 2N-CH 40V 30A 56LFPAK
BUK7K8R7-40EX BUK7K8R7-40EX NXP Semiconductors MOSFET 2N-CH 40V 30A 56LFPAK
BUK7K8R7-40EX BUK7K8R7-40EX NXP Semiconductors MOSFET 2N-CH 40V 30A 56LFPAK
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