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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PMWD15UN,518 PMWD15UN,518 NXP Semiconductors MOSFET 2N-CH 20V 11.6A 8TSSOP
PMWD16UN,518 PMWD16UN,518 NXP Semiconductors MOSFET 2N-CH 20V 9.9A 8TSSOP
PMWD16UN,518 PMWD16UN,518 NXP Semiconductors MOSFET 2N-CH 20V 9.9A 8TSSOP
PMWD16UN,518 PMWD16UN,518 NXP Semiconductors MOSFET 2N-CH 20V 9.9A 8TSSOP
PMWD19UN,518 PMWD19UN,518 NXP Semiconductors MOSFET 2N-CH 30V 5.6A 8TSSOP
PMWD19UN,518 PMWD19UN,518 NXP Semiconductors MOSFET 2N-CH 30V 5.6A 8TSSOP
PMWD19UN,518 PMWD19UN,518 NXP Semiconductors MOSFET 2N-CH 30V 5.6A 8TSSOP
PMWD30UN,518 PMWD30UN,518 NXP Semiconductors MOSFET 2N-CH 30V 5A 8TSSOP
PMWD30UN,518 PMWD30UN,518 NXP Semiconductors MOSFET 2N-CH 30V 5A 8TSSOP
SI9936DY,518 SI9936DY,518 NXP Semiconductors MOSFET 2N-CH 30V 5A SOT96-1
PHN210,118 PHN210,118 NXP Semiconductors MOSFET 2N-CH 30V 8SOIC
PHKD13N03LT,118 PHKD13N03LT,118 NXP Semiconductors MOSFET 2N-CH 30V 10.4A 8SOIC
PMDPB28UN,115 PMDPB28UN,115 NXP Semiconductors MOSFET 2N-CH 20V 4.6A HUSON6
PMDPB28UN,115 PMDPB28UN,115 NXP Semiconductors MOSFET 2N-CH 20V 4.6A HUSON6
PMDPB28UN,115 PMDPB28UN,115 NXP Semiconductors MOSFET 2N-CH 20V 4.6A HUSON6
PMDPB38UNE,115 PMDPB38UNE,115 NXP Semiconductors MOSFET 2N-CH 20V 4A HUSON6
PMDPB38UNE,115 PMDPB38UNE,115 NXP Semiconductors MOSFET 2N-CH 20V 4A HUSON6
PMDPB38UNE,115 PMDPB38UNE,115 NXP Semiconductors MOSFET 2N-CH 20V 4A HUSON6
PMDPB42UN,115 PMDPB42UN,115 NXP Semiconductors MOSFET 2N-CH 20V 3.9A HUSON6
PMDPB42UN,115 PMDPB42UN,115 NXP Semiconductors MOSFET 2N-CH 20V 3.9A HUSON6
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