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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NTJD4158CT1G NTJD4158CT1G ON Semiconductor MOSFET N/P-CH 30V/20V SOT-363
NTJD4158CT1G NTJD4158CT1G ON Semiconductor MOSFET N/P-CH 30V/20V SOT-363
NTJD4158CT1G NTJD4158CT1G ON Semiconductor MOSFET N/P-CH 30V/20V SOT-363
NTJD1155LT1G NTJD1155LT1G ON Semiconductor MOSFET N/P-CH 8V 1.3A SOT-363
NTJD1155LT1G NTJD1155LT1G ON Semiconductor MOSFET N/P-CH 8V 1.3A SOT-363
NTJD1155LT1G NTJD1155LT1G ON Semiconductor MOSFET N/P-CH 8V 1.3A SOT-363
NTHD4102PT1G NTHD4102PT1G ON Semiconductor MOSFET 2P-CH 20V 2.9A CHIPFET
NTHD4102PT1G NTHD4102PT1G ON Semiconductor MOSFET 2P-CH 20V 2.9A CHIPFET
NTHD4102PT1G NTHD4102PT1G ON Semiconductor MOSFET 2P-CH 20V 2.9A CHIPFET
NTUD3170NZT5G NTUD3170NZT5G ON Semiconductor MOSFET 2N-CH 20V 0.22A SOT-963
NTUD3170NZT5G NTUD3170NZT5G ON Semiconductor MOSFET 2N-CH 20V 0.22A SOT-963
NTUD3170NZT5G NTUD3170NZT5G ON Semiconductor MOSFET 2N-CH 20V 0.22A SOT-963
NTHC5513T1G NTHC5513T1G ON Semiconductor MOSFET N/P-CH 20V 1206A
NTHC5513T1G NTHC5513T1G ON Semiconductor MOSFET N/P-CH 20V 1206A
NTHC5513T1G NTHC5513T1G ON Semiconductor MOSFET N/P-CH 20V 1206A
NTHD3102CT1G NTHD3102CT1G ON Semiconductor MOSFET N/P-CH 20V 4A/3.1A 1206A
NTHD3102CT1G NTHD3102CT1G ON Semiconductor MOSFET N/P-CH 20V 4A/3.1A 1206A
NTHD3102CT1G NTHD3102CT1G ON Semiconductor MOSFET N/P-CH 20V 4A/3.1A 1206A
NTJD5121NT1G NTJD5121NT1G ON Semiconductor MOSFET 2N-CH 60V 0.295A SOT363
NTJD5121NT1G NTJD5121NT1G ON Semiconductor MOSFET 2N-CH 60V 0.295A SOT363
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