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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NTJD5121NT1G NTJD5121NT1G ON Semiconductor MOSFET 2N-CH 60V 0.295A SOT363
NTZD3155CT1G NTZD3155CT1G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NTZD3155CT1G NTZD3155CT1G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NTZD3155CT1G NTZD3155CT1G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NTZD3152PT1G NTZD3152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.43A SOT-563
NTZD3152PT1G NTZD3152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.43A SOT-563
NTZD3152PT1G NTZD3152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.43A SOT-563
NTZD5110NT1G NTZD5110NT1G ON Semiconductor MOSFET 2N-CH 60V 0.294A SOT563
NTZD5110NT1G NTZD5110NT1G ON Semiconductor MOSFET 2N-CH 60V 0.294A SOT563
NTZD5110NT1G NTZD5110NT1G ON Semiconductor MOSFET 2N-CH 60V 0.294A SOT563
NTJD4105CT1G NTJD4105CT1G ON Semiconductor MOSFET N/P-CH 20V/8V SOT-363
NTJD4105CT1G NTJD4105CT1G ON Semiconductor MOSFET N/P-CH 20V/8V SOT-363
NTJD4105CT1G NTJD4105CT1G ON Semiconductor MOSFET N/P-CH 20V/8V SOT-363
NTGD4167CT1G NTGD4167CT1G ON Semiconductor MOSFET N/P-CH 30V 6-TSOP
NTGD4167CT1G NTGD4167CT1G ON Semiconductor MOSFET N/P-CH 30V 6-TSOP
NTGD4167CT1G NTGD4167CT1G ON Semiconductor MOSFET N/P-CH 30V 6-TSOP
NTUD3169CZT5G NTUD3169CZT5G ON Semiconductor MOSFET N/P-CH 20V SOT-963
NTUD3169CZT5G NTUD3169CZT5G ON Semiconductor MOSFET N/P-CH 20V SOT-963
NTUD3169CZT5G NTUD3169CZT5G ON Semiconductor MOSFET N/P-CH 20V SOT-963
NTHD4508NT1G NTHD4508NT1G ON Semiconductor MOSFET 2N-CH 20V 3A CHIPFET
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