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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NTMD5838NLR2G NTMD5838NLR2G ON Semiconductor MOSFET 2N-CH 40V 7.4A 8SOIC
NTMD5838NLR2G NTMD5838NLR2G ON Semiconductor MOSFET 2N-CH 40V 7.4A 8SOIC
NTMD5838NLR2G NTMD5838NLR2G ON Semiconductor MOSFET 2N-CH 40V 7.4A 8SOIC
ECH8651R-TL-H ECH8651R-TL-H ON Semiconductor MOSFET 2N-CH 24V 10A ECH8
ECH8651R-TL-H ECH8651R-TL-H ON Semiconductor MOSFET 2N-CH 24V 10A ECH8
ECH8651R-TL-H ECH8651R-TL-H ON Semiconductor MOSFET 2N-CH 24V 10A ECH8
NTMD6N03R2G NTMD6N03R2G ON Semiconductor MOSFET 2N-CH 30V 6A 8SOIC
NTMD6N03R2G NTMD6N03R2G ON Semiconductor MOSFET 2N-CH 30V 6A 8SOIC
NTMD6N03R2G NTMD6N03R2G ON Semiconductor MOSFET 2N-CH 30V 6A 8SOIC
NTHD4502NT1G NTHD4502NT1G ON Semiconductor MOSFET 2N-CH 30V 2.2A CHIPFET
NTHD4502NT1G NTHD4502NT1G ON Semiconductor MOSFET 2N-CH 30V 2.2A CHIPFET
NTHD4502NT1G NTHD4502NT1G ON Semiconductor MOSFET 2N-CH 30V 2.2A CHIPFET
MCH6661-TL-W MCH6661-TL-W ON Semiconductor MOSFET 2N-CH 30V 1.8A SOT363
MCH6661-TL-W MCH6661-TL-W ON Semiconductor MOSFET 2N-CH 30V 1.8A SOT363
MCH6661-TL-W MCH6661-TL-W ON Semiconductor MOSFET 2N-CH 30V 1.8A SOT363
ECH8695R-TL-W ECH8695R-TL-W ON Semiconductor MOSFET 2N-CH 24V 11A SOT28
ECH8695R-TL-W ECH8695R-TL-W ON Semiconductor MOSFET 2N-CH 24V 11A SOT28
ECH8695R-TL-W ECH8695R-TL-W ON Semiconductor MOSFET 2N-CH 24V 11A SOT28
NTMD4840NR2G NTMD4840NR2G ON Semiconductor MOSFET 2N-CH 30V 4.5A 8SOIC
NTMD4840NR2G NTMD4840NR2G ON Semiconductor MOSFET 2N-CH 30V 4.5A 8SOIC
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