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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NTHD4508NT1G NTHD4508NT1G ON Semiconductor MOSFET 2N-CH 20V 3A CHIPFET
NTHD4508NT1G NTHD4508NT1G ON Semiconductor MOSFET 2N-CH 20V 3A CHIPFET
NTLJD3115PT1G NTLJD3115PT1G ON Semiconductor MOSFET 2P-CH 20V 2.3A 6-WDFN
NTLJD3115PT1G NTLJD3115PT1G ON Semiconductor MOSFET 2P-CH 20V 2.3A 6-WDFN
NTLJD3115PT1G NTLJD3115PT1G ON Semiconductor MOSFET 2P-CH 20V 2.3A 6-WDFN
NTMD4N03R2G NTMD4N03R2G ON Semiconductor MOSFET 2N-CH 30V 4A 8SOIC
NTMD4N03R2G NTMD4N03R2G ON Semiconductor MOSFET 2N-CH 30V 4A 8SOIC
NTMD4N03R2G NTMD4N03R2G ON Semiconductor MOSFET 2N-CH 30V 4A 8SOIC
NTLJD3119CTBG NTLJD3119CTBG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
NTLJD3119CTBG NTLJD3119CTBG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
NTLJD3119CTBG NTLJD3119CTBG ON Semiconductor MOSFET N/P-CH 20V 6WDFN
NTMD3P03R2G NTMD3P03R2G ON Semiconductor MOSFET 2P-CH 30V 2.34A 8SOIC
NTMD3P03R2G NTMD3P03R2G ON Semiconductor MOSFET 2P-CH 30V 2.34A 8SOIC
NTMD3P03R2G NTMD3P03R2G ON Semiconductor MOSFET 2P-CH 30V 2.34A 8SOIC
NTHD3100CT1G NTHD3100CT1G ON Semiconductor MOSFET N/P-CH 20V CHIPFET
NTHD3100CT1G NTHD3100CT1G ON Semiconductor MOSFET N/P-CH 20V CHIPFET
NTHD3100CT1G NTHD3100CT1G ON Semiconductor MOSFET N/P-CH 20V CHIPFET
NTMD6P02R2G NTMD6P02R2G ON Semiconductor MOSFET 2P-CH 20V 4.8A 8SOIC
NTMD6P02R2G NTMD6P02R2G ON Semiconductor MOSFET 2P-CH 20V 4.8A 8SOIC
NTMD6P02R2G NTMD6P02R2G ON Semiconductor MOSFET 2P-CH 20V 4.8A 8SOIC
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