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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PMDXB1200UPEZ PMDXB1200UPEZ NXP Semiconductors MOSFET P-CH 30V DUAL DFN1010B-6
PMDXB550UNEZ PMDXB550UNEZ NXP Semiconductors MOSFET N-CH 30V DUAL DFN1010B-6
PMDXB550UNEZ PMDXB550UNEZ NXP Semiconductors MOSFET N-CH 30V DUAL DFN1010B-6
PMDXB550UNEZ PMDXB550UNEZ NXP Semiconductors MOSFET N-CH 30V DUAL DFN1010B-6
PMDXB600UNEZ PMDXB600UNEZ NXP Semiconductors MOSFET 2N-CH 20V 0.6A 6DFN
PMDXB600UNEZ PMDXB600UNEZ NXP Semiconductors MOSFET 2N-CH 20V 0.6A 6DFN
PMDXB600UNEZ PMDXB600UNEZ NXP Semiconductors MOSFET 2N-CH 20V 0.6A 6DFN
PHC21025,118 PHC21025,118 NXP Semiconductors MOSFET N/P-CH 30V 8SOIC
NTZD3154NT1G NTZD3154NT1G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT-563
NTZD3154NT1G NTZD3154NT1G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT-563
NTZD3154NT1G NTZD3154NT1G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT-563
NTJD4001NT1G NTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT-363
NTJD4001NT1G NTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT-363
NTJD4001NT1G NTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT-363
NTJD4401NT1G NTJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SOT-363
NTJD4401NT1G NTJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SOT-363
NTJD4401NT1G NTJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SOT-363
NTJD4152PT1G NTJD4152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT1G NTJD4152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT1G NTJD4152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.88A SOT-363
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