中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 138139140141142143144145146147148 274
PDF 缩略图 器件名称 制造商 描述
PMDPB42UN,115 PMDPB42UN,115 NXP Semiconductors MOSFET 2N-CH 20V 3.9A HUSON6
PMDPB56XN,115 PMDPB56XN,115 NXP Semiconductors MOSFET 2N-CH 30V 3.1A HUSON6
PMDPB56XN,115 PMDPB56XN,115 NXP Semiconductors MOSFET 2N-CH 30V 3.1A HUSON6
PMDPB56XN,115 PMDPB56XN,115 NXP Semiconductors MOSFET 2N-CH 30V 3.1A HUSON6
PMDPB70EN,115 PMDPB70EN,115 NXP Semiconductors MOSFET 2N-CH 30V 3.5A 6DFN
PMDPB70EN,115 PMDPB70EN,115 NXP Semiconductors MOSFET 2N-CH 30V 3.5A 6DFN
PMDPB70EN,115 PMDPB70EN,115 NXP Semiconductors MOSFET 2N-CH 30V 3.5A 6DFN
PMDPB95XNE,115 PMDPB95XNE,115 NXP Semiconductors MOSFET 2N-CH 30V 2.4A HUSON6
PMDPB95XNE,115 PMDPB95XNE,115 NXP Semiconductors MOSFET 2N-CH 30V 2.4A HUSON6
PMDPB95XNE,115 PMDPB95XNE,115 NXP Semiconductors MOSFET 2N-CH 30V 2.4A HUSON6
PMGD130UN,115 PMGD130UN,115 NXP Semiconductors MOSFET 2N-CH 20V 1.2A 6TSSOP
PMGD130UN,115 PMGD130UN,115 NXP Semiconductors MOSFET 2N-CH 20V 1.2A 6TSSOP
PMGD130UN,115 PMGD130UN,115 NXP Semiconductors MOSFET 2N-CH 20V 1.2A 6TSSOP
PMGD175XN,115 PMGD175XN,115 NXP Semiconductors MOSFET 2N-CH 30V 0.9A 6TSSOP
PMGD175XN,115 PMGD175XN,115 NXP Semiconductors MOSFET 2N-CH 30V 0.9A 6TSSOP
PMGD175XN,115 PMGD175XN,115 NXP Semiconductors MOSFET 2N-CH 30V 0.9A 6TSSOP
BUK9K8R7-40EX BUK9K8R7-40EX NXP Semiconductors MOSFET 2N-CH 40V 30A 56LFPAK
BUK9K8R7-40EX BUK9K8R7-40EX NXP Semiconductors MOSFET 2N-CH 40V 30A 56LFPAK
BUK9K8R7-40EX BUK9K8R7-40EX NXP Semiconductors MOSFET 2N-CH 40V 30A 56LFPAK
PMDT290UCE,115 PMDT290UCE,115 NXP Semiconductors MOSFET N/P-CH 20V SOT666
1... 138139140141142143144145146147148 274