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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NTMD4840NR2G NTMD4840NR2G ON Semiconductor MOSFET 2N-CH 30V 4.5A 8SOIC
NTMFD4902NFT1G NTMFD4902NFT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4902NFT1G NTMFD4902NFT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4902NFT1G NTMFD4902NFT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMD4820NR2G NTMD4820NR2G ON Semiconductor MOSFET 2N-CH 30V 4.9A 8SOIC
NTMD4820NR2G NTMD4820NR2G ON Semiconductor MOSFET 2N-CH 30V 4.9A 8SOIC
NTMD4820NR2G NTMD4820NR2G ON Semiconductor MOSFET 2N-CH 30V 4.9A 8SOIC
NTZD3154NT5G NTZD3154NT5G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT563
NTZD3154NT5G NTZD3154NT5G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT563
NTZD3154NT5G NTZD3154NT5G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT563
MCH6664-TL-W MCH6664-TL-W ON Semiconductor MOSFET 2P-CH 30V 1.5A SOT363
MCH6664-TL-W MCH6664-TL-W ON Semiconductor MOSFET 2P-CH 30V 1.5A SOT363
MCH6664-TL-W MCH6664-TL-W ON Semiconductor MOSFET 2P-CH 30V 1.5A SOT363
VEC2616-TL-H VEC2616-TL-H ON Semiconductor MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-H VEC2616-TL-H ON Semiconductor MOSFET N/P-CH 60V 3A/2.5A VEC8
VEC2616-TL-H VEC2616-TL-H ON Semiconductor MOSFET N/P-CH 60V 3A/2.5A VEC8
NTMFD4901NFT1G NTMFD4901NFT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4901NFT1G NTMFD4901NFT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTMFD4901NFT1G NTMFD4901NFT1G ON Semiconductor MOSFET 2N-CH 30V 8DFN
NTJD5121NT2G NTJD5121NT2G ON Semiconductor MOSFET 2N-CH 60V 0.295A SOT363
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