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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NVJD5121NT1G NVJD5121NT1G ON Semiconductor MOSFET 2N-CH 60V 0.295A SC88
NTZD3155CT2G NTZD3155CT2G ON Semiconductor MOSFET N/P-CH 20V SOT-563
NVTJD4001NT1G NVTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SC-88
NVTJD4001NT2G NVTJD4001NT2G ON Semiconductor MOSFET 2N-CH 30V 0.25A SC-88
NTZD3158PT1G NTZD3158PT1G ON Semiconductor MOSFET P-CH 20V SOT563
NTZD3152PT1H NTZD3152PT1H ON Semiconductor MOSFET 2P-CH 20V 0.43A SOT563
NTZD3154NT1H NTZD3154NT1H ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT563
NTZD3155CT1H NTZD3155CT1H ON Semiconductor MOSFET N/P-CH 20V SOT563
NTJD4105CT2G NTJD4105CT2G ON Semiconductor MOSFET N/P-CH 20V/8V SOT-363
CPH5617-TL-E CPH5617-TL-E ON Semiconductor MOSFET 2N-CH 30V 0.15A CPH5
MCH6602-TL-E MCH6602-TL-E ON Semiconductor MOSFET 2N-CH 30V 0.35A MCPH6
MCH6613-TL-E MCH6613-TL-E ON Semiconductor MOSFET N/P-CH 30V MCPH6
NVJD4401NT1G NVJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SC88
NSTJD1155LT1G NSTJD1155LT1G ON Semiconductor MOSFET 2P-CH 8V 1.3A SC88
MCH6601-TL-E MCH6601-TL-E ON Semiconductor MOSFET 2P-CH 30V 0.2A MCPH6
MCH6604-TL-E MCH6604-TL-E ON Semiconductor MOSFET 2N-CH 50V 0.25A MCPH6
MCH6603-TL-H MCH6603-TL-H ON Semiconductor MOSFET 2P-CH 50V 0.14A MCPH6
MCH6662-TL-H MCH6662-TL-H ON Semiconductor MOSFET 2N-CH 20V 2A MCPH6
CPH6636R-TL-W CPH6636R-TL-W ON Semiconductor MOSFET 2N-CH 24V 6A CPH6
EFC4626R-TR EFC4626R-TR ON Semiconductor MOSFET 2N-CH 24V 5A CSP4
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