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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PHC2300,118 PHC2300,118 NXP Semiconductors MOSFET N/P-CH 300V 8SOIC
PHC2300,118 PHC2300,118 NXP Semiconductors MOSFET N/P-CH 300V 8SOIC
PHC2300,118 PHC2300,118 NXP Semiconductors MOSFET N/P-CH 300V 8SOIC
PHP225,118 PHP225,118 NXP Semiconductors MOSFET 2P-CH 30V 2.3A 8SOIC
PHP225,118 PHP225,118 NXP Semiconductors MOSFET 2P-CH 30V 2.3A 8SOIC
PHP225,118 PHP225,118 NXP Semiconductors MOSFET 2P-CH 30V 2.3A 8SOIC
NX7002AKS,115 NX7002AKS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.17A SC-88
NX7002AKS,115 NX7002AKS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.17A SC-88
NX7002AKS,115 NX7002AKS,115 NXP Semiconductors MOSFET 2N-CH 60V 0.17A SC-88
BUK7K35-60EX BUK7K35-60EX NXP Semiconductors MOSFET 2N-CH 60V 20.7A 56LFPAK
BUK7K35-60EX BUK7K35-60EX NXP Semiconductors MOSFET 2N-CH 60V 20.7A 56LFPAK
BUK7K35-60EX BUK7K35-60EX NXP Semiconductors MOSFET 2N-CH 60V 20.7A 56LFPAK
PMDT290UNE,115 PMDT290UNE,115 NXP Semiconductors MOSFET 2N-CH 20V 0.8A SOT666
PMDT290UNE,115 PMDT290UNE,115 NXP Semiconductors MOSFET 2N-CH 20V 0.8A SOT666
PMDT290UNE,115 PMDT290UNE,115 NXP Semiconductors MOSFET 2N-CH 20V 0.8A SOT666
NX3008CBKV,115 NX3008CBKV,115 NXP Semiconductors MOSFET N/P-CH 30V SOT666
NX3008CBKV,115 NX3008CBKV,115 NXP Semiconductors MOSFET N/P-CH 30V SOT666
NX3008CBKV,115 NX3008CBKV,115 NXP Semiconductors MOSFET N/P-CH 30V SOT666
NX3008NBKV,115 NX3008NBKV,115 NXP Semiconductors MOSFET 2N-CH 30V 0.4A SOT666
NX3008NBKV,115 NX3008NBKV,115 NXP Semiconductors MOSFET 2N-CH 30V 0.4A SOT666
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