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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BLF8G38LS-75VJ BLF8G38LS-75VJ NXP Semiconductors TRANS RF 75W LDMOS CDFM6
BLF6G22-180PN,135 BLF6G22-180PN,135 NXP Semiconductors TRANSISTOR PWR LDMOS SOT539A
BLF7G27L-140,112 BLF7G27L-140,112 NXP Semiconductors TRANS LDMOS SOT502A
BLF7G27LS-140,112 BLF7G27LS-140,112 NXP Semiconductors TRANS LDMOS SOT502B
BLF7G10L-250,112 BLF7G10L-250,112 NXP Semiconductors TRANS LDMOS POWER SOT502
BLF7G10LS-250,112 BLF7G10LS-250,112 NXP Semiconductors TRANS LDMOS POWER SOT502
BLF9G38LS-90PU BLF9G38LS-90PU NXP Semiconductors TRANS RF LDMOS 90W SOT1121
BLF7G27L-150P,118 BLF7G27L-150P,118 NXP Semiconductors TRANS LDMOS SOT539A
BLF7G27LS-150P,118 BLF7G27LS-150P,118 NXP Semiconductors TRANS LDMOS SOT539B
BLF8G10LS-270V,118 BLF8G10LS-270V,118 NXP Semiconductors TRANSISTOR RF POWER 270W ACC-6L
BLF8G20LS-260A,118 BLF8G20LS-260A,118 NXP Semiconductors TRANSISTOR RF POWER 260W LDMOST
BLF6G10LS-200R,118 BLF6G10LS-200R,118 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF6G20-230PRN,118 BLF6G20-230PRN,118 NXP Semiconductors TRANSISTOR PWR LDMOS SOT539A
BLF8G10LS-270GVJ BLF8G10LS-270GVJ NXP Semiconductors TRANSISTOR RF POWER 270W ACC-6L
BLF8G22LS-270J BLF8G22LS-270J NXP Semiconductors TRANS 270W LDMOS SOT502B
BLF8G09LS-270WJ BLF8G09LS-270WJ NXP Semiconductors TRANS RF 270W LDMOS CDFM6
BLF6G10LS-260PRN,1 BLF6G10LS-260PRN,1 NXP Semiconductors TRANS PWR LDMOS SOT539
BLF6G10LS-260PRN:1 BLF6G10LS-260PRN:1 NXP Semiconductors TRANS PWR LDMOS SOT539
BLF6G10L-260PRN:11 BLF6G10L-260PRN:11 NXP Semiconductors TRANS PWR LDMOS SOT539A
BLF6G10L-260PRN,11 BLF6G10L-260PRN,11 NXP Semiconductors TRANS PWR LDMOS SOT539A
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