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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BLF6G10L-260PBM:11 BLF6G10L-260PBM:11 NXP Semiconductors TRANS LDMOS SOT1110A3/B3
BLF8G10LS-270,112 BLF8G10LS-270,112 NXP Semiconductors TRANSISTOR RF POWER 270W LDMOST
BLF8G38LS-75VU BLF8G38LS-75VU NXP Semiconductors TRANS RF 75W LDMOS CDFM6
BLF7G24L-160P,118 BLF7G24L-160P,118 NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF7G24LS-160P,118 BLF7G24LS-160P,118 NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF8G09LS-270GWJ BLF8G09LS-270GWJ NXP Semiconductors TRANS RF 270W LDMOS CDFM6
BLF6G22-180PN,112 BLF6G22-180PN,112 NXP Semiconductors TRANS BASESTATION SOT539A
BLF7G27L-150P,112 BLF7G27L-150P,112 NXP Semiconductors TRANS LDMOS SOT539A
BLF7G27LS-150P,112 BLF7G27LS-150P,112 NXP Semiconductors TRANS LDMOS SOT539B
BLF8G10LS-270V,112 BLF8G10LS-270V,112 NXP Semiconductors TRANSISTOR RF POWER 270W ACC-6L
BLF8G20LS-260A,112 BLF8G20LS-260A,112 NXP Semiconductors TRANSISTOR RF POWER 260W LDMOST
BLF6G10LS-200R,112 BLF6G10LS-200R,112 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF8G10LS-270GV,12 BLF8G10LS-270GV,12 NXP Semiconductors TRANSISTOR RF POWER 270W ACC-6L
BLF6G20-230PRN,112 BLF6G20-230PRN,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT539A
BLF8G22LS-270U BLF8G22LS-270U NXP Semiconductors TRANS 270W LDMOS SOT502B
BLF8G09LS-270WU BLF8G09LS-270WU NXP Semiconductors TRANS RF 270W LDMOS CDFM6
BLF6G10L-260PBM,11 BLF6G10L-260PBM,11 NXP Semiconductors TRANS LDMOS SOT1110A3/B3
BLF8G10LS-300PJ BLF8G10LS-300PJ NXP Semiconductors TRANS RF 300W LDMOS SOT539B
BLF8G09LS-270GWQ BLF8G09LS-270GWQ NXP Semiconductors TRANS RF 270W LDMOS CDFM6
BLF7G24L-160P,112 BLF7G24L-160P,112 NXP Semiconductors TRANSISTOR RF POWER LDMOST
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