中电网首页

产品索引  > 分立半导体产品 > RF FET

厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
1... 93949596979899100101102103 138
PDF 缩略图 器件名称 制造商 描述
BLF8G19LS-170BVU BLF8G19LS-170BVU NXP Semiconductors TRANS 170W LDMOS CDFM6 ACC-6L
BLF8G20LS-220U BLF8G20LS-220U NXP Semiconductors TRANS 220W SOT502B LDMOST
BLF7G22LS-200,112 BLF7G22LS-200,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF7G22L-200,112 BLF7G22L-200,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF8G22L-160BV,118 BLF8G22L-160BV,118 NXP Semiconductors TRANSISTOR CDFM6
BLF8G22LS-240J BLF8G22LS-240J NXP Semiconductors TRANSISTOR RF POWER SOT502B
BLC8G27LS-160AVJ BLC8G27LS-160AVJ NXP Semiconductors IC TRANS LDMOS 160W 6DFM
BLF8G20LS-230VJ BLF8G20LS-230VJ NXP Semiconductors TRANS RF 230W LDMOS CDFM6
BLF6G10-200RN,112 BLF6G10-200RN,112 NXP Semiconductors TRANSISTOR POWER LDMOS SOT502A
BLF7G21L-160P,112 BLF7G21L-160P,112 NXP Semiconductors TRANS LDMOS SOT1121A
BLF7G21LS-160P,112 BLF7G21LS-160P,112 NXP Semiconductors TRANS LDMOS SOT1121B
BLF6G10LS-160,118 BLF6G10LS-160,118 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF2425M7L100J BLF2425M7L100J NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF2425M7LS100J BLF2425M7LS100J NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF8G22LS-200V,118 BLF8G22LS-200V,118 NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLC8G27LS-180AVY BLC8G27LS-180AVY NXP Semiconductors IC TRANS LDMOS 180W
BLF8G20LS-200V,112 BLF8G20LS-200V,112 NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLF8G20LS-200V,115 BLF8G20LS-200V,115 NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLF8G22LS-200GVJ BLF8G22LS-200GVJ NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLF8G22LS-205VJ BLF8G22LS-205VJ NXP Semiconductors TRANS RF LDMOS 205W SOT1239
1... 93949596979899100101102103 138