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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BLF8G20LS-160VJ BLF8G20LS-160VJ NXP Semiconductors TRANS RF 160W LDMOS CDFM6
BLF7G15LS-200,118 BLF7G15LS-200,118 NXP Semiconductors TRANS LDMOS SOT502B
BLF7G22L-130,112 BLF7G22L-130,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502A
BLF7G22L-160,112 BLF7G22L-160,112 NXP Semiconductors TRANS LDMOS SOT502A
BLF8G27LS-150VU BLF8G27LS-150VU NXP Semiconductors TRANSISTOR RF PWR CDFM6 ACC-6L
BLF8G20LS-140VU BLF8G20LS-140VU NXP Semiconductors TRANS RF 140W LDMOS CDFM6
BLF7G22LS-160,118 BLF7G22LS-160,118 NXP Semiconductors TRANS LDMOS SOT502B
BLF7G22LS-160,112 BLF7G22LS-160,112 NXP Semiconductors TRANS LDMOS SOT502B
BLF8G24LS-150VJ BLF8G24LS-150VJ NXP Semiconductors TRANSISTOR RF POWER
BLF8G27LS-150GVQ BLF8G27LS-150GVQ NXP Semiconductors TRANSISTOR RF PWR CDFM6 ACC-6L
BLC8G27LS-140AVZ BLC8G27LS-140AVZ NXP Semiconductors TRANS RF 140W 65V LDMOS
BLF6G22LS-180RN:11 BLF6G22LS-180RN:11 NXP Semiconductors TRANS LDMOS POWER 180W SOT-502B
BLC8G21LS-160AVY BLC8G21LS-160AVY NXP Semiconductors TRANS RF 160W 65V LDMOS
BLF8G24LS-150GVJ BLF8G24LS-150GVJ NXP Semiconductors TRANSISTOR RF POWER
BLF8G10L-160,112 BLF8G10L-160,112 NXP Semiconductors TRANSISTOR LDMOST
BLF6G10LS-135R,118 BLF6G10LS-135R,118 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF6G27-100,112 BLF6G27-100,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502A
BLF8G19LS-170BV,11 BLF8G19LS-170BV,11 NXP Semiconductors TRANS 170W LDMOS CDFM6 ACC-6L
BLF8G20LS-220J BLF8G20LS-220J NXP Semiconductors TRANS 220W SOT502B LDMOST
BLF7G22LS-200,118 BLF7G22LS-200,118 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
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