中电网首页

产品索引  > 分立半导体产品 > RF FET

厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
1... 9293949596979899100101102 138
PDF 缩略图 器件名称 制造商 描述
BLD6G22L-50,112 BLD6G22L-50,112 NXP Semiconductors TRANS DOHERTY W/CDMA SOT1130A
BLD6G22LS-50,112 BLD6G22LS-50,112 NXP Semiconductors TRANS DOHERTY W/CDMA SOT1130B
BLD6G21L-50,112 BLD6G21L-50,112 NXP Semiconductors TRANSISTOR DOHERTY W-CDMA SOT113
BLF8G20LS-160VU BLF8G20LS-160VU NXP Semiconductors TRANS RF 160W LDMOS CDFM6
BLP15M7160PY BLP15M7160PY NXP Semiconductors TRANSISTOR RF PWR LDMOS 4HSOP
BLF7G15LS-200,112 BLF7G15LS-200,112 NXP Semiconductors TRANS LDMOS SOT502B
BLF7G21L-160P,118 BLF7G21L-160P,118 NXP Semiconductors TRANS LDMOS SOT1121A
BLF7G21LS-160P,118 BLF7G21LS-160P,118 NXP Semiconductors TRANS LDMOS SOT1121B
BLF8G24LS-150VU BLF8G24LS-150VU NXP Semiconductors TRANSISTOR RF POWER
BLF8G20LS-200V,118 BLF8G20LS-200V,118 NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLF6G22LS-180RN,11 BLF6G22LS-180RN,11 NXP Semiconductors TRANSISTOR POWER LDMOS SOT502B
BLF6H10L-160,112 BLF6H10L-160,112 NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF6H10LS-160,112 BLF6H10LS-160,112 NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLC8G21LS-160AVZ BLC8G21LS-160AVZ NXP Semiconductors TRANS RF 160W 65V LDMOS
BLF8G24LS-150GVQ BLF8G24LS-150GVQ NXP Semiconductors TRANSISTOR RF POWER
BLF6G10LS-135R,112 BLF6G10LS-135R,112 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF10M6200U BLF10M6200U NXP Semiconductors IC TRANS LDMOS 200W SOT502A
BLF10M6LS200U BLF10M6LS200U NXP Semiconductors IC TRANS LDMOS 200W SOT502B
BLF7G20L-200,118 BLF7G20L-200,118 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF8G22LS-220J BLF8G22LS-220J NXP Semiconductors TRANS 220W LDMOS SOT502B
1... 9293949596979899100101102 138