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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BLF7G20L-200,112 BLF7G20L-200,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF7G20LS-200,112 BLF7G20LS-200,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF8G22LS-220U BLF8G22LS-220U NXP Semiconductors TRANS 220W LDMOS SOT502B
BLF6G20-180PN,112 BLF6G20-180PN,112 NXP Semiconductors TRANSISTOR POWER LDMOS SOT539A
BLF8G22L-160BV,112 BLF8G22L-160BV,112 NXP Semiconductors TRANSISTOR CDFM6
BLF8G22LS-240U BLF8G22LS-240U NXP Semiconductors TRANSISTOR RF POWER SOT502B
BLC8G27LS-160AVU BLC8G27LS-160AVU NXP Semiconductors IC TRANS LDMOS 160W 6DFM
BLF8G20LS-230VU BLF8G20LS-230VU NXP Semiconductors TRANS RF 230W LDMOS CDFM6
BLF7G27L-140,118 BLF7G27L-140,118 NXP Semiconductors TRANS LDMOS SOT502A
BLF7G27LS-140,118 BLF7G27LS-140,118 NXP Semiconductors TRANS LDMOS SOT502B
BLF7G10L-250,118 BLF7G10L-250,118 NXP Semiconductors TRANS LDMOS POWER SOT502
BLF9G38LS-90PJ BLF9G38LS-90PJ NXP Semiconductors TRANS RF LDMOS 90W SOT1121
BLF6G10LS-160,112 BLF6G10LS-160,112 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF2425M7L100U BLF2425M7L100U NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF2425M7LS100U BLF2425M7LS100U NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF8G22LS-200V,112 BLF8G22LS-200V,112 NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLC8G27LS-180AVZ BLC8G27LS-180AVZ NXP Semiconductors IC TRANS LDMOS 180W
BLF8G22LS-205VU BLF8G22LS-205VU NXP Semiconductors TRANS RF LDMOS 205W SOT1239
BLF8G22LS-200GV,12 BLF8G22LS-200GV,12 NXP Semiconductors TRANSISTOR RF POWER 200W ACC-6L
BLF8G10LS-270,118 BLF8G10LS-270,118 NXP Semiconductors TRANSISTOR RF POWER 270W LDMOST
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