中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1234567891011 20
PDF 缩略图 器件名称 制造商 描述
NTZD3154NT1G NTZD3154NT1G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT-563
NTZD3154NT1G NTZD3154NT1G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT-563
NTZD3154NT1G NTZD3154NT1G ON Semiconductor MOSFET 2N-CH 20V 0.54A SOT-563
NTJD4001NT1G NTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT-363
NTJD4001NT1G NTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT-363
NTJD4001NT1G NTJD4001NT1G ON Semiconductor MOSFET 2N-CH 30V 0.25A SOT-363
NTJD4401NT1G NTJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SOT-363
NTJD4401NT1G NTJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SOT-363
NTJD4401NT1G NTJD4401NT1G ON Semiconductor MOSFET 2N-CH 20V 0.63A SOT-363
NTJD4152PT1G NTJD4152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT1G NTJD4152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT1G NTJD4152PT1G ON Semiconductor MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4158CT1G NTJD4158CT1G ON Semiconductor MOSFET N/P-CH 30V/20V SOT-363
NTJD4158CT1G NTJD4158CT1G ON Semiconductor MOSFET N/P-CH 30V/20V SOT-363
NTJD4158CT1G NTJD4158CT1G ON Semiconductor MOSFET N/P-CH 30V/20V SOT-363
NTJD1155LT1G NTJD1155LT1G ON Semiconductor MOSFET N/P-CH 8V 1.3A SOT-363
NTJD1155LT1G NTJD1155LT1G ON Semiconductor MOSFET N/P-CH 8V 1.3A SOT-363
NTJD1155LT1G NTJD1155LT1G ON Semiconductor MOSFET N/P-CH 8V 1.3A SOT-363
NTHD4102PT1G NTHD4102PT1G ON Semiconductor MOSFET 2P-CH 20V 2.9A CHIPFET
NTHD4102PT1G NTHD4102PT1G ON Semiconductor MOSFET 2P-CH 20V 2.9A CHIPFET
1234567891011 20