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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSO220N03MD G BSO220N03MD G Infineon Technologies MOSFET 2N-CH 30V 6A 8DSO
BSO220N03MD G BSO220N03MD G Infineon Technologies MOSFET 2N-CH 30V 6A 8DSO
BSO220N03MD G BSO220N03MD G Infineon Technologies MOSFET 2N-CH 30V 6A 8DSO
BSO150N03MD G BSO150N03MD G Infineon Technologies MOSFET 2N-CH 30V 8A 8DSO
BSO150N03MD G BSO150N03MD G Infineon Technologies MOSFET 2N-CH 30V 8A 8DSO
BSO150N03MD G BSO150N03MD G Infineon Technologies MOSFET 2N-CH 30V 8A 8DSO
BSC150N03LD G BSC150N03LD G Infineon Technologies MOSFET 2N-CH 30V 8A 8TDSON
BSC150N03LD G BSC150N03LD G Infineon Technologies MOSFET 2N-CH 30V 8A 8TDSON
BSC150N03LD G BSC150N03LD G Infineon Technologies MOSFET 2N-CH 30V 8A 8TDSON
BSC072N03LD G BSC072N03LD G Infineon Technologies MOSFET 2N-CH 30V 11.5A 8TDSON
BSC072N03LD G BSC072N03LD G Infineon Technologies MOSFET 2N-CH 30V 11.5A 8TDSON
BSC072N03LD G BSC072N03LD G Infineon Technologies MOSFET 2N-CH 30V 11.5A 8TDSON
2N7002DW H6327 2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363
2N7002DW H6327 2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363
2N7002DW H6327 2N7002DW H6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363
BSD840N H6327 BSD840N H6327 Infineon Technologies MOSFET 2N-CH 20V 0.88A SOT363
BSD840N H6327 BSD840N H6327 Infineon Technologies MOSFET 2N-CH 20V 0.88A SOT363
BSD840N H6327 BSD840N H6327 Infineon Technologies MOSFET 2N-CH 20V 0.88A SOT363
BSO615C G BSO615C G Infineon Technologies MOSFET N/P-CH 60V 3.1A/2A 8SOIC
BSO615C G BSO615C G Infineon Technologies MOSFET N/P-CH 60V 3.1A/2A 8SOIC
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