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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSO615C G BSO615C G Infineon Technologies MOSFET N/P-CH 60V 3.1A/2A 8SOIC
BSC750N10ND G BSC750N10ND G Infineon Technologies MOSFET 2N-CH 100V 3.2A 8TDSON
BSC750N10ND G BSC750N10ND G Infineon Technologies MOSFET 2N-CH 100V 3.2A 8TDSON
BSC750N10ND G BSC750N10ND G Infineon Technologies MOSFET 2N-CH 100V 3.2A 8TDSON
BSO615N G BSO615N G Infineon Technologies MOSFET 2N-CH 60V 2.6A 8SOIC
BSO615N G BSO615N G Infineon Technologies MOSFET 2N-CH 60V 2.6A 8SOIC
BSO615N G BSO615N G Infineon Technologies MOSFET 2N-CH 60V 2.6A 8SOIC
BSO303P H BSO303P H Infineon Technologies MOSFET 2P-CH 30V 7A DSO-8
BSO303P H BSO303P H Infineon Technologies MOSFET 2P-CH 30V 7A DSO-8
BSO303P H BSO303P H Infineon Technologies MOSFET 2P-CH 30V 7A DSO-8
IPG20N06S2L-50 IPG20N06S2L-50 Infineon Technologies MOSFET 2N-CH 55V 20A TDSON-8-4
IPG20N06S2L-35 IPG20N06S2L-35 Infineon Technologies MOSFET 2N-CH 55V 20A TDSON-8-4
IPG20N06S2L-65 IPG20N06S2L-65 Infineon Technologies MOSFET 2N-CH 55V 20A TDSON-8-4
BSO604NS2 BSO604NS2 Infineon Technologies MOSFET 2N-CH 55V 5A 8DSO
BSO604NS2 BSO604NS2 Infineon Technologies MOSFET 2N-CH 55V 5A 8DSO
BSO604NS2 BSO604NS2 Infineon Technologies MOSFET 2N-CH 55V 5A 8DSO
BSO612CV G BSO612CV G Infineon Technologies MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CV G BSO612CV G Infineon Technologies MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CV G BSO612CV G Infineon Technologies MOSFET N/P-CH 60V 2A 8-SOIC
BSO207P H BSO207P H Infineon Technologies MOSFET 2P-CH 20V 5A DSO-8
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