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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSO207P H BSO207P H Infineon Technologies MOSFET 2P-CH 20V 5A DSO-8
BSO207P H BSO207P H Infineon Technologies MOSFET 2P-CH 20V 5A DSO-8
BSO203P H BSO203P H Infineon Technologies MOSFET 2P-CH 20V 7A DSO-8
BSO203P H BSO203P H Infineon Technologies MOSFET 2P-CH 20V 7A DSO-8
BSO203P H BSO203P H Infineon Technologies MOSFET 2P-CH 20V 7A DSO-8
BSO330N02K G BSO330N02K G Infineon Technologies MOSFET 2N-CH 20V 5.4A 8DSO
BSO330N02K G BSO330N02K G Infineon Technologies MOSFET 2N-CH 20V 5.4A 8DSO
BSO330N02K G BSO330N02K G Infineon Technologies MOSFET 2N-CH 20V 5.4A 8DSO
BSD223P BSD223P Infineon Technologies MOSFET 2P-CH 20V 0.39A SOT363
BSD223P BSD223P Infineon Technologies MOSFET 2P-CH 20V 0.39A SOT363
BSD223P BSD223P Infineon Technologies MOSFET 2P-CH 20V 0.39A SOT363
BSO203P BSO203P Infineon Technologies MOSFET 2P-CH 20V 8.2A 8SOIC
BSO203P BSO203P Infineon Technologies MOSFET 2P-CH 20V 8.2A 8SOIC
BSO204P BSO204P Infineon Technologies MOSFET 2P-CH 20V 7A 8SOIC
BSO207P BSO207P Infineon Technologies MOSFET 2P-CH 20V 5.7A 8SOIC
BSO215C BSO215C Infineon Technologies MOSFET N/P-CH 20V 3.7A 8SOIC
BSO4804 BSO4804 Infineon Technologies MOSFET 2N-CH 30V 8A 8SOIC
BSO4804 BSO4804 Infineon Technologies MOSFET 2N-CH 30V 8A 8SOIC
BSO612CV BSO612CV Infineon Technologies MOSFET N/P-CH 60V 3A/2A 8SOIC
BSO612CV BSO612CV Infineon Technologies MOSFET N/P-CH 60V 3A/2A 8SOIC
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