中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 99100101102103104105106107108109 274
PDF 缩略图 器件名称 制造商 描述
BSD235C L6327 BSD235C L6327 Infineon Technologies MOSFET N/P-CH 20V SOT-363
BSL214N L6327 BSL214N L6327 Infineon Technologies MOSFET 2N-CH 20V 1.5A 6TSOP
BSL214N L6327 BSL214N L6327 Infineon Technologies MOSFET 2N-CH 20V 1.5A 6TSOP
BSL214N L6327 BSL214N L6327 Infineon Technologies MOSFET 2N-CH 20V 1.5A 6TSOP
BSL316C L6327 BSL316C L6327 Infineon Technologies MOSFET N/P-CH 30V TSOP-6
BSL316C L6327 BSL316C L6327 Infineon Technologies MOSFET N/P-CH 30V TSOP-6
BSL316C L6327 BSL316C L6327 Infineon Technologies MOSFET N/P-CH 30V TSOP-6
BSD235N L6327 BSD235N L6327 Infineon Technologies MOSFET 2N-CH 20V 0.95A SOT363
BSD235N L6327 BSD235N L6327 Infineon Technologies MOSFET 2N-CH 20V 0.95A SOT363
BSD235N L6327 BSD235N L6327 Infineon Technologies MOSFET 2N-CH 20V 0.95A SOT363
BSL205N L6327 BSL205N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.5A 6TSOP
BSL205N L6327 BSL205N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.5A 6TSOP
BSL205N L6327 BSL205N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.5A 6TSOP
BSL215C L6327 BSL215C L6327 Infineon Technologies MOSFET N/P-CH 20V 1.5A TSOP-6
BSL215C L6327 BSL215C L6327 Infineon Technologies MOSFET N/P-CH 20V 1.5A TSOP-6
BSL215C L6327 BSL215C L6327 Infineon Technologies MOSFET N/P-CH 20V 1.5A TSOP-6
BSL215P L6327 BSL215P L6327 Infineon Technologies MOSFET 2P-CH 20V 1.5A TSOP-6
BSL215P L6327 BSL215P L6327 Infineon Technologies MOSFET 2P-CH 20V 1.5A TSOP-6
BSL215P L6327 BSL215P L6327 Infineon Technologies MOSFET 2P-CH 20V 1.5A TSOP-6
BSL306N L6327 BSL306N L6327 Infineon Technologies MOSFET 2N-CH 30V 2.3A 6TSOP
1... 99100101102103104105106107108109 274