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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSL306N L6327 BSL306N L6327 Infineon Technologies MOSFET 2N-CH 30V 2.3A 6TSOP
BSL306N L6327 BSL306N L6327 Infineon Technologies MOSFET 2N-CH 30V 2.3A 6TSOP
BSL315P L6327 BSL315P L6327 Infineon Technologies MOSFET 2P-CH 30V 1.5A TSOP-6
BSL315P L6327 BSL315P L6327 Infineon Technologies MOSFET 2P-CH 30V 1.5A TSOP-6
BSL315P L6327 BSL315P L6327 Infineon Technologies MOSFET 2P-CH 30V 1.5A TSOP-6
BSD840N L6327 BSD840N L6327 Infineon Technologies MOSFET 2N-CH 20V 0.88A SOT363
BSL314PE L6327 BSL314PE L6327 Infineon Technologies MOSFET 2P-CH 30V 1.5A 6TSOP
BSO211P H BSO211P H Infineon Technologies MOSFET 2P-CH 20V 4A 8DSO
IPG15N06S3L-45 IPG15N06S3L-45 Infineon Technologies MOSFET 2N-CH 55V 15A TDSON-8
IPG20N06S3L-23 IPG20N06S3L-23 Infineon Technologies MOSFET 2N-CH 55V 20A TDSON-8
IPG20N06S3L-35 IPG20N06S3L-35 Infineon Technologies MOSFET 2N-CH 55V 20A TDSON-8
BSD223P H6327 BSD223P H6327 Infineon Technologies MOSFET 2P-CH 20V 0.39A SOT363
BSL308C L6327 BSL308C L6327 Infineon Technologies MOSFET N/P-CH 30V 2.3A/2A 6TSOP
BSD235N H6327 BSD235N H6327 Infineon Technologies MOSFET 2N-CH 20V 0.95A SOT363
BSD235N H6327 BSD235N H6327 Infineon Technologies MOSFET 2N-CH 20V 0.95A SOT363
BSD235N H6327 BSD235N H6327 Infineon Technologies MOSFET 2N-CH 20V 0.95A SOT363
BSL207N L6327 BSL207N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.1A 6TSOP
BSL207N L6327 BSL207N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.1A 6TSOP
BSL207N L6327 BSL207N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.1A 6TSOP
BSL308PE L6327 BSL308PE L6327 Infineon Technologies MOSFET 2P-CH 30V 2A 6TSOP
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