中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 9899100101102103104105106107108 274
PDF 缩略图 器件名称 制造商 描述
BSO615N BSO615N Infineon Technologies MOSFET 2N-CH 60V 2.6A 8SOIC
BSO615N BSO615N Infineon Technologies MOSFET 2N-CH 60V 2.6A 8SOIC
BSO4804T BSO4804T Infineon Technologies MOSFET 2N-CH 30V 8A 8SOIC
BSO4804T BSO4804T Infineon Technologies MOSFET 2N-CH 30V 8A 8SOIC
BSO615CT BSO615CT Infineon Technologies MOSFET N/P-CH 60V 3.1A/2A 8SOIC
BSO615CT BSO615CT Infineon Technologies MOSFET N/P-CH 60V 3.1A/2A 8SOIC
BSO615CT BSO615CT Infineon Technologies MOSFET N/P-CH 60V 3.1A/2A 8SOIC
BSO303P BSO303P Infineon Technologies MOSFET 2P-CH 30V 8.2A 8DSO
BSO200N03 BSO200N03 Infineon Technologies MOSFET 2N-CH 30V 6.6A 8DSO
BSO200N03 BSO200N03 Infineon Technologies MOSFET 2N-CH 30V 6.6A 8DSO
BSO200N03 BSO200N03 Infineon Technologies MOSFET 2N-CH 30V 6.6A 8DSO
BSO350N03 BSO350N03 Infineon Technologies MOSFET 2N-CH 30V 5A 8DSO
BSO350N03 BSO350N03 Infineon Technologies MOSFET 2N-CH 30V 5A 8DSO
BSO350N03 BSO350N03 Infineon Technologies MOSFET 2N-CH 30V 5A 8DSO
2N7002DW L6327 2N7002DW L6327 Infineon Technologies MOSFET 2N-CH 60V 0.3A SOT363
BSD223P L6327 BSD223P L6327 Infineon Technologies MOSFET 2P-CH 20V 0.39A SOT363
BTS7904B BTS7904B Infineon Technologies MOSFET N/P-CH 55V/30V 40A TO263
BTS7904S BTS7904S Infineon Technologies MOSFET N/P-CH 55V/30V 40A TO220
BSD235C L6327 BSD235C L6327 Infineon Technologies MOSFET N/P-CH 20V SOT-363
BSD235C L6327 BSD235C L6327 Infineon Technologies MOSFET N/P-CH 20V SOT-363
1... 9899100101102103104105106107108 274