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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSL308PE L6327 BSL308PE L6327 Infineon Technologies MOSFET 2P-CH 30V 2A 6TSOP
BSL308PE L6327 BSL308PE L6327 Infineon Technologies MOSFET 2P-CH 30V 2A 6TSOP
BSL806N L6327 BSL806N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.3A 6TSOP
BSL806N L6327 BSL806N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.3A 6TSOP
BSL806N L6327 BSL806N L6327 Infineon Technologies MOSFET 2N-CH 20V 2.3A 6TSOP
BSD235C H6327 BSD235C H6327 Infineon Technologies MOSFET N/P-CH 20V SOT363
BSD235C H6327 BSD235C H6327 Infineon Technologies MOSFET N/P-CH 20V SOT363
BSD235C H6327 BSD235C H6327 Infineon Technologies MOSFET N/P-CH 20V SOT363
BSO211P BSO211P Infineon Technologies MOSFET 2P-CH 20V 4.7A 8SOIC
BSO211P BSO211P Infineon Technologies MOSFET 2P-CH 20V 4.7A 8SOIC
BSO150N03 BSO150N03 Infineon Technologies MOSFET 2N-CH 30V 7.6A 8DSO
BSO150N03 BSO150N03 Infineon Technologies MOSFET 2N-CH 30V 7.6A 8DSO
BSO150N03 BSO150N03 Infineon Technologies MOSFET 2N-CH 30V 7.6A 8DSO
IRF7509TRPBF IRF7509TRPBF International Rectifier MOSFET N/P-CH 30V 2.7A/2A MICRO8
IRF7509TRPBF IRF7509TRPBF International Rectifier MOSFET N/P-CH 30V 2.7A/2A MICRO8
IRF7509TRPBF IRF7509TRPBF International Rectifier MOSFET N/P-CH 30V 2.7A/2A MICRO8
IRF7507TRPBF IRF7507TRPBF International Rectifier MOSFET N/P-CH 20V 1.7A MICRO8
IRF7507TRPBF IRF7507TRPBF International Rectifier MOSFET N/P-CH 20V 1.7A MICRO8
IRF7507TRPBF IRF7507TRPBF International Rectifier MOSFET N/P-CH 20V 1.7A MICRO8
IRF7303TRPBF IRF7303TRPBF International Rectifier MOSFET 2N-CH 30V 4.9A 8-SOIC
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