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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI9926BDY-T1-E3 SI9926BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 6.2A 8-SOIC
SI9933BDY-T1-E3 SI9933BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 3.6A 8-SOIC
SI9933BDY-T1-E3 SI9933BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 3.6A 8-SOIC
SI9933BDY-T1-E3 SI9933BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 3.6A 8-SOIC
SI9934BDY-T1-E3 SI9934BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8-SOIC
SI9934BDY-T1-E3 SI9934BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8-SOIC
SI9934BDY-T1-E3 SI9934BDY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 8-SOIC
SIA911DJ-T1-E3 SIA911DJ-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA911DJ-T1-E3 SIA911DJ-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA911DJ-T1-E3 SIA911DJ-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA914DJ-T1-E3 SIA914DJ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA914DJ-T1-E3 SIA914DJ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA914DJ-T1-E3 SIA914DJ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIB911DK-T1-E3 SIB911DK-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6
SIB911DK-T1-E3 SIB911DK-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6
SIB911DK-T1-E3 SIB911DK-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6
SIF902EDZ-T1-E3 SIF902EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 7A 6-POWERPAK
SIF902EDZ-T1-E3 SIF902EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 7A 6-POWERPAK
SIF902EDZ-T1-E3 SIF902EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 7A 6-POWERPAK
SIF912EDZ-T1-E3 SIF912EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 7.4A 6-POWERPAK
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