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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7945DP-T1-GE3 SI7945DP-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 7A PPAK SO-8
SI7945DP-T1-GE3 SI7945DP-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 7A PPAK SO-8
SIA914DJ-T1-GE3 SIA914DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA914DJ-T1-GE3 SIA914DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA914DJ-T1-GE3 SIA914DJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIB911DK-T1-GE3 SIB911DK-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6
SIB911DK-T1-GE3 SIB911DK-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6
SIB911DK-T1-GE3 SIB911DK-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.6A SC75-6
SI1553DL-T1 SI1553DL-T1 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI9945AEY-T1 SI9945AEY-T1 Vishay Siliconix MOSFET 2N-CH 60V 3.7A 8SOIC
SI1551DL-T1-GE3 SI1551DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI1551DL-T1-GE3 SI1551DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI1551DL-T1-GE3 SI1551DL-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC70-6
SI1563DH-T1-GE3 SI1563DH-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563DH-T1-GE3 SI1563DH-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1563DH-T1-GE3 SI1563DH-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 1.13A SC70-6
SI1972DH-T1-GE3 SI1972DH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 1.3A SC-70-6
SI1972DH-T1-GE3 SI1972DH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 1.3A SC-70-6
SI1972DH-T1-GE3 SI1972DH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 1.3A SC-70-6
SI1988DH-T1-GE3 SI1988DH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.3A SC-70-6
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