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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA913DJ-T1-GE3 SIA913DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC70-6
SIA913DJ-T1-GE3 SIA913DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC70-6
SIA913DJ-T1-GE3 SIA913DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC70-6
SI4561DY-T1-GE3 SI4561DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6.8A 8-SOIC
SI4561DY-T1-GE3 SI4561DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6.8A 8-SOIC
SI4561DY-T1-GE3 SI4561DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6.8A 8-SOIC
SI6928DQ-T1-GE3 SI6928DQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4A 8-TSSOP
SI6928DQ-T1-GE3 SI6928DQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4A 8-TSSOP
SI6928DQ-T1-GE3 SI6928DQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4A 8-TSSOP
SI6963BDQ-T1-GE3 SI6963BDQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3.4A 8-TSSOP
SI6963BDQ-T1-GE3 SI6963BDQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3.4A 8-TSSOP
SI6963BDQ-T1-GE3 SI6963BDQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 3.4A 8-TSSOP
SI7501DN-T1-GE3 SI7501DN-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 5.4A 1212-8
SI7501DN-T1-GE3 SI7501DN-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 5.4A 1212-8
SI7842DP-T1-GE3 SI7842DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.3A PPAK SO-8
SI7842DP-T1-GE3 SI7842DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.3A PPAK SO-8
SI7842DP-T1-GE3 SI7842DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.3A PPAK SO-8
SI7844DP-T1-GE3 SI7844DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7844DP-T1-GE3 SI7844DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6.4A PPAK SO-8
SI7945DP-T1-GE3 SI7945DP-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 7A PPAK SO-8
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