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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIF912EDZ-T1-E3 SIF912EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 7.4A 6-POWERPAK
SIF912EDZ-T1-E3 SIF912EDZ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 7.4A 6-POWERPAK
SI5519DU-T1-GE3 SI5519DU-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6A CHIPFETs
SI5519DU-T1-GE3 SI5519DU-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6A CHIPFET
SI5519DU-T1-GE3 SI5519DU-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6A CHIPFET
SI7940DP-T1-GE3 SI7940DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 7.6A PPAK SO-8
SI7940DP-T1-GE3 SI7940DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 7.6A PPAK SO-8
SI7940DP-T1-GE3 SI7940DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 12V 7.6A PPAK SO-8
SI7948DP-T1-GE3 SI7948DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 3A PPAK SO-8
SI7948DP-T1-GE3 SI7948DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 3A PPAK SO-8
SI7948DP-T1-GE3 SI7948DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 3A PPAK SO-8
SIA511DJ-T1-GE3 SIA511DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6
SIA511DJ-T1-GE3 SIA511DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6
SIA511DJ-T1-GE3 SIA511DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6
SIA513DJ-T1-GE3 SIA513DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.5A SC70-6
SIA513DJ-T1-GE3 SIA513DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.5A SC70-6
SIA513DJ-T1-GE3 SIA513DJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.5A SC70-6
SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
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